| 摘要 |
WHEN ELEMENT ISOLATION OXIDE FILMS (2) ARE FORMED BY FORMING AT LEAST ONE THIN FILM ON A SILICON SUBSTRATE (1), FORMING OPENINGS (20) BY EXPOSING PREDETERMINED AREAS AND THE REMAINDER BEING NON-OPENING PORTIONS, FORMING OXIDE FILMS (2) ON PORTIONS CORRESPONDING TO THE PREDETERMINED AREAS BY SELECTIVE OXIDATION OF THE SILICON SUBSTRATE (1) VIA THE OPENINGS (20), REMOVING THIN FILM(S) EXCEPT FOR THE OXIDE FILM (2) TO EXPOSE AT LEAST THE OXIDE FILM AMONG THE OXIDE FILM (2) AND SILICON SUBSTRATE (1), CONDUCTING ADDITIONAL OXIDATION ON THE WHOLE EXPOSED SURFACE, AND REMOVING UNNECESSARY PORTIONS OF OXIDE FROM AROUND THE PREDETERMINED AREAS, THE SILICON SUBSTRATE (1) SURFACE UNDER THE NON-OPENING PORTIONS BECOMES SUBSTANTIALLY FLAT AND IS SUITABLE FOR PRODUCING SEMICONDUCTOR DEVICES IMPROVED IN INTEGRATION AND RELIABILITY.(FIG. 2)
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