发明名称 WIRING PATERNS FORMED BY SELECTIVE METAL PLATING
摘要 Conductive sidewall spacer structures are formed using a method that patterns structures (mandrels) and activates the sidewalls of the structures. Metal ions are attached to the sidewalls of the structures and these metal ions are reduced to form seed material. The structures are then trimmed and the seed material is plated to form wiring on the sidewalls of the structures.
申请公布号 US2007207604(A1) 申请公布日期 2007.09.06
申请号 US20070745610 申请日期 2007.05.08
申请人 FURUKAWA TOSHIHARU;HAKEY MARK C;HOLMES STEVEN J;HORAK DAVID V;KOBURGER CHARLES W III 发明人 FURUKAWA TOSHIHARU;HAKEY MARK C.;HOLMES STEVEN J.;HORAK DAVID V.;KOBURGER CHARLES W.III
分类号 H01L21/3205 主分类号 H01L21/3205
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