| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor wafer equipped with a plurality of semiconductor devices in which production yield and quality can be enhanced, and to provide its dicing method. SOLUTION: In a wafer 20a, a flat portion 21a is formed to extend up to the outer circumference of the wafer 20a on the laser beam irradiation surface. Since the flat portion 21a is formed on the dicing line DL upon which a laser beam L impinges, the laser beam L impinging on the wafer 20a can impinge normally to the surface 21b even at the outer circumferential edge M of the wafer 20a. Since the laser beam L is not focused on the surface 21b at the outer circumferential edge M of the wafer 20a, ablation can be prevented at the outer circumferential edge M. COPYRIGHT: (C)2007,JPO&INPIT
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