| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve external quantum efficiency by forming protrusions and recesses in a translucent conductive layer provided on the surface of a light emitting element composed of a nitride semiconductor, and taking out the light emitted from a light emitting layer effectively with no attenuation by preventing repetition of total reflection on the semiconductor laminate portion in a substrate. <P>SOLUTION: A semiconductor laminate portion 6 is formed on one surface of a substrate 1 by laminating a nitride semiconductor layer including an n-type layer 3 and a p-type layer 5 to form a light emitting layer, and a translucent conductive layer 7 is provided on the surface side of the semiconductor laminate portion 6. A pattern of protrusions and recesses (recess 7a) is formed on the surface of the translucent conductive layer 7. A p-type electrode 8 is provided on the translucent conductive layer 7 and an n-side electrode 9 is provided while being electrically connected with the n-type layer 3 exposed by etching a part of the semiconductor laminate portion 6. <P>COPYRIGHT: (C)2007,JPO&INPIT |
