| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon wafer surface strain distribution measuring device which can measure the strain distribution of the most surface of a silicon wafer accompanying the sufficient number of measuring points within a reasonable measuring time. SOLUTION: Ultraviolet light with a wavelength about 363.8 nm emitted from an argon ion laser 10 is condensed on a wafer of a measuring object test piece 60 through a condensing irradiation mechanism 40 and the like. Raman scattering light emitted from the region on the silicon wafer on which the ultraviolet light is irradiated is incident on a monochromator-type spectroscope 80 through the condensing irradiation mechanism 40. The energy distribution of the Raman scattering light is calculated from the image signal of a CCD detector 90, and the amount of strain is calculated in the silicon wafer region on which the ultraviolet light is irradiated. The strain distribution of the silicon wafer surface is indicated by mapping by a computer 100 etc. COPYRIGHT: (C)2007,JPO&INPIT
|
