| 摘要 |
The inductor for a semiconductor device includes at least one dielectric pattern selectively formed on a top of the interlayer dielectric, at least one first metal wire formed on a top of the interlayer dielectric, at least one second metal wire formed on a top of the dielectric pattern, and an upper protective film formed on the top of the interlayer dielectric to completely cover the first and second metal wires, wherein the first and second metal wires are alternately arranged at different vertical locations and are formed in a spiral configuration.
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