| 摘要 |
PROBLEM TO BE SOLVED: To form the desirable temperature distribution on a substrate using a uniform heating plate. SOLUTION: The compound semiconductor manufacturing apparatus comprises a susceptor 3 having an aperture 7 to store the substrate 2, the uniform heating plate 1 for equalizing temperature distribution of the substrate 2 through contact thereof with a rear surface of the substrate 2 to be stored within the aperture 7 of the susceptor 3, and a heating means for heating the substrate 2 through the uniform heating plate 1 for epitaxial growth of a compound semiconductor crystal over the surface of the heated substrate 2. In this compound semiconductor manufacturing apparatus, the substrate 2 is set in contact with a part showing lower temperature distribution generated on the uniform heating plate 1, and is not in contact with a part showing higher temperature distribution by setting the uniform heating plate 1 in partial contact with the rear surface of the substrate 2. COPYRIGHT: (C)2007,JPO&INPIT
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