| 摘要 |
A copper line structure and a method for forming the same are provided to simplify forming processes and to economize semiconductor fabrication costs by obtaining a predetermined structure composed of a barrier metal and a copper film without a copper seed layer using the same electroplating processes. An insulating layer is formed on a semiconductor substrate(100). A barrier metal initial layer is formed on the insulating layer. A barrier metal(411) is formed on the barrier metal initial layer by using a first electroplating process. The barrier metal is made of the same material as that of the barrier metal initial layer. A copper film(450) is formed on the barrier metal by using a second electroplating process. The first and second electroplating processes are the same processes. The barrier metal initial layer is made of one selected from a group consisting of Ru, Ag, Pd, Pt, and Au. |
