发明名称 |
METHOD FOR FABRICATING A GATE DIELECTRIC OF A FIELD EFFECT TRANSISTOR |
摘要 |
<p>A method for fabricating a gate dielectric of a field effect transistor is disclosed herein. In one embodiment, the method includes the steps of removing a native oxide layer, forming an oxide layer, forming a gate dielectric layer over the oxide layer, oxidizing the gate dielectric layer, and annealing the layers and underlying thermal oxide/silicon interface. Optionally, the oxide layer may be nitridized prior to forming the gate dielectric layer. Optionally, the gate dielectric layer may be nitridized prior to oxidizing the gate dielectric layer. In one embodiment, at least portions of the method are performed using processing reactors arranged on a cluster tool.</p> |
申请公布号 |
WO2007047369(A2) |
申请公布日期 |
2007.04.26 |
申请号 |
WO2006US39892 |
申请日期 |
2006.10.12 |
申请人 |
APPLIED MATERIALS, INC.;CHUA, THAI CHENG;CZARNIK, CORY;OLSEN, CHRISTOPHER SEAN;AHMED, KHALED Z.;KRAUS, PHILIP ALLAN |
发明人 |
CHUA, THAI CHENG;CZARNIK, CORY;OLSEN, CHRISTOPHER SEAN;AHMED, KHALED Z.;KRAUS, PHILIP ALLAN |
分类号 |
H01L21/8234;H01L21/31;H01L21/3205;H01L21/336 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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