| 摘要 |
A LED chip including a substrate, a first type doped semiconductor layer, a second type doped semiconductor layer, a light emitting layer, at least an Indium-doped Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N based material layer (0<=x<1) and at least a tunneling junction layer is provided. The first type doped semiconductor layer is disposed on the substrate, and the light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The Indium-doped Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N based material layer is disposed on at least one surface of the light emitting layer, and the tunneling junction layer is disposed between the Indium-doped Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N based material layer and the first type doped semiconductor layer and/or disposed between the Indium-doped Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N based material layer and the second type doped semiconductor layer, wherein the Indium-doped Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N based material layer and the tunneling junction layer are disposed on the same side of the light emitting layer.
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