发明名称 Semiconductor wafer and method of fabricating an IC die
摘要 There is provided a semiconductor wafer comprising a plurality of replicated IC modules. Each replicated IC module is capable of forming an individual IC die. The semiconductor wafer further comprises inter-module cross-wafer electrical connections, and the replicated IC modules are further arranged to be cut into IC dies comprising multiple replicated IC modules.;There is further provided a method of fabricating an IC die. The method comprises fabricating such a semiconductor wafer, determining a required configuration of replicated IC modules, identifying inter-module boundaries along which to cut the semiconductor wafer to achieve the required configuration of replicated IC modules, and cutting the semiconductor wafer along the identified inter-module boundaries to produce at least one IC die comprising the required configuration of replicated IC modules.
申请公布号 US9406347(B2) 申请公布日期 2016.08.02
申请号 US201414574597 申请日期 2014.12.18
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 Moran Robert F.;Beattie Derek;Maiolani Mark
分类号 H01L23/544;G11C5/02;G11C5/06;G11C8/10;G11C7/10;H01L21/82;H01L27/02;H01L23/528 主分类号 H01L23/544
代理机构 代理人
主权项 1. A semiconductor wafer comprising a plurality of replicated integrated circuit, IC, modules, each replicated IC module capable of forming an individual IC die; wherein the semiconductor wafer further comprises inter-module cross-wafer electrical connections and the replicated IC modules are further arranged to be cut into IC dies comprising multiple replicated IC modules.
地址 Austin TX US