发明名称 |
Semiconductor wafer and method of fabricating an IC die |
摘要 |
There is provided a semiconductor wafer comprising a plurality of replicated IC modules. Each replicated IC module is capable of forming an individual IC die. The semiconductor wafer further comprises inter-module cross-wafer electrical connections, and the replicated IC modules are further arranged to be cut into IC dies comprising multiple replicated IC modules.;There is further provided a method of fabricating an IC die. The method comprises fabricating such a semiconductor wafer, determining a required configuration of replicated IC modules, identifying inter-module boundaries along which to cut the semiconductor wafer to achieve the required configuration of replicated IC modules, and cutting the semiconductor wafer along the identified inter-module boundaries to produce at least one IC die comprising the required configuration of replicated IC modules. |
申请公布号 |
US9406347(B2) |
申请公布日期 |
2016.08.02 |
申请号 |
US201414574597 |
申请日期 |
2014.12.18 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
Moran Robert F.;Beattie Derek;Maiolani Mark |
分类号 |
H01L23/544;G11C5/02;G11C5/06;G11C8/10;G11C7/10;H01L21/82;H01L27/02;H01L23/528 |
主分类号 |
H01L23/544 |
代理机构 |
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代理人 |
|
主权项 |
1. A semiconductor wafer comprising a plurality of replicated integrated circuit, IC, modules, each replicated IC module capable of forming an individual IC die;
wherein the semiconductor wafer further comprises inter-module cross-wafer electrical connections and the replicated IC modules are further arranged to be cut into IC dies comprising multiple replicated IC modules. |
地址 |
Austin TX US |