| 摘要 |
A semiconductor device includes a semiconductor substrate, an interlayer insulating film, a tungsten film, a first barrier metal film, a second barrier metal film and a metal wiring film. The interlayer insulating film is formed on the semiconductor substrate, and has an opening. The tungsten film is embedded in the opening. The first barrier metal film is formed on the tungsten film and excludes a Ti film. The second barrier metal film is formed on the first barrier metal film and is a Ti-containing film. The metal wiring film is formed on the second barrier metal film. |
