发明名称 |
Low profile wire bond for an electron sensing device in an image intensifier tube |
摘要 |
An electron sensing device for receiving electrons from an output surface of an electron gain device has a silicon die including an active surface area for positioning below the output surface of an electron gain device. The silicon die also includes a silicon step formed below and surrounding the active surface area, and a first array of bond pads formed on the silicon step for providing output signals from the silicon die. When the electron sensing device is positioned below the electron gain device, a tight vertical clearance is formed between the output surface of the electron gain device and the active surface area of the electron sensing device.
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申请公布号 |
US7199345(B1) |
申请公布日期 |
2007.04.03 |
申请号 |
US20040811398 |
申请日期 |
2004.03.26 |
申请人 |
ITT MANUFACTURING ENTERPRISES INC. |
发明人 |
MEISEL THOMAS M.;THOMAS NILS I. |
分类号 |
H01J40/14;H01J31/50;H01J43/30;H01L31/00 |
主分类号 |
H01J40/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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