| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having a light-emitter made of an InGaAlP semiconductor, which light-emitting element offers higher brightness and higher reliability. <P>SOLUTION: The semiconductor light-emitting element comprises a metal board, a first clad layer made of a first conductive InGaAlP semiconductor clad layer of which is formed on the metal board, a light-emitting layer made of an InGaAlP semiconductor light-emitting layer of which is formed on the first clad layer, a second clad layer made of a second conductive InGaAlP semiconductor clad layer of which is formed on the light-emitting layer, and a current diffusion layer made of a second conductive semiconductor current diffusion layer of which is formed on the second clad layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
