发明名称 |
MEMORY DEVICE WITH IMPROVED DATA RETENTION |
摘要 |
The present memory device (130) include first and second electrodes (132, 138), a passive layer (134) between the first and second electrodes (132, 138), and an active layer (136) between the first and second electrodes (132, 138) and into which ions from the passive layer (134) may be provided, and from which the ions may be provided into the passive layer (134). The active layer (136) is made up of a base material and an impurity therein. The combined the material and impurity have a lower diffusion coefficient than the base material alone. |
申请公布号 |
WO2006104824(A3) |
申请公布日期 |
2007.02.22 |
申请号 |
WO2006US10545 |
申请日期 |
2006.03.24 |
申请人 |
SPANSION LLC;LAN, ZHIDA;HADDAD, SAMEER;AVANZINO, STEVEN |
发明人 |
LAN, ZHIDA;HADDAD, SAMEER;AVANZINO, STEVEN |
分类号 |
H01L45/00;G11C13/02 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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