发明名称 FLASH MEMORY DEVICE AND METHOD OF REPAIRING DEFECTS AND TRIMMING VOLTAGES
摘要 A memory device includes a nonvolatile memory cell array including a plurality of memory cells with a portion of the memory cells to store fuse data, and a fuse register to store the fuse data from the memory cell array. An operation of the memory device is modified in response to the fuse register.
申请公布号 US2007033449(A1) 申请公布日期 2007.02.08
申请号 US20060380749 申请日期 2006.04.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG SANG-WON;YOUN DONG-KYU
分类号 G11C29/00 主分类号 G11C29/00
代理机构 代理人
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