发明名称 |
Magnetoresistive random-access memory device |
摘要 |
Disclosed is a new type of magnetoresistive random-access memory (MRAM) device using a magnetic semiconductor, which is capable of achieving high-integration and energy saving in a simplified structure without any MOS transistor, based on a rectification effect derived from a p-i-n type low-resistance tunneling-magnetoresistance-effect (low-resistance TMR) diode with a structure having a p-type half-metallic ferromagnetic semiconductor, an n-type half-metallic ferromagnetic semiconductor and at least one atomic layer of nonmagnetic insulator interposed therebetween, or a rectification effect derived from a p-n type low-resistance tunneling-magnetoresistance-effect (low-resistance TMR) diode with a structure devoid of the interposed atomic layer of nonmagnetic insulator.
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申请公布号 |
US7164180(B2) |
申请公布日期 |
2007.01.16 |
申请号 |
US20030518391 |
申请日期 |
2003.06.11 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
YOSHIDA HIROSHI;SATO KAZUNORI |
分类号 |
H01L29/82;G11C11/15;H01F10/32;H01L21/8246;H01L27/105;H01L43/08;H01L43/12 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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