| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent a short circuit due to damage of a nitride layer by forming a buffer oxide layer. A gate dielectric(32) is formed on a semiconductor substrate(30). A gate electrode overlapped with a hard mask layer pattern is formed on the gate dielectric. A buffer oxide layer(42) is formed on the whole surface of the structure to control a step coverage and to have a vertical profile. A nitride layer(44) is formed on the whole surface of the structure. An anti-reflection layer(40) is formed on an upper portion of a hard mask layer(38). The buffer oxide layer is deposited at 200 to 500‹C. SiH4 of the buffer oxide layer is 100 to 500sccm. N2/N2O of the buffer oxide layer is 1000 to 5000 and 5000 to 9000sccm.
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