| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a hetero junction field effect transistor operating equivalently to a normally-off and having excellent characteristics of an original semiconductor element with high reliability and with a small package size. <P>SOLUTION: The semiconductor device includes a normally-on hetero junction field effect transistor 100 having high withstand voltage; and a hetero junction field effect transistor 100 operating equally to that of a normally-off type, by forming a normally-off insulating gate type field effect transistor 200 into monolithic and connecting them in cascode. Further, an avalanche diode 300 is connected in parallel to the insulating gate type field effect transistor 200 to prevent the same transistor 200 from being destroyed. <P>COPYRIGHT: (C)2007,JPO&INPIT |
