| 摘要 |
An object of the present invention is to improve the reliability and the operation performance of a semiconductor device comprising a driver circuit and a pixel pixel section by optimizing the TFT structure disposed in each circuit in accordance with the function of the circuit. The optimized circuit operation can be obtained by providing a LDD region that overlaps with at least the gate electrode in the driver circuit n-channel TFT, and a LDD region in the pixel section n-channel TFT in which the impurity concentration of the both LDD regions are differed. |
