发明名称 SINGLE SCAN IRRADIATION FOR CRYSTALLIZATION OF THIN FILMS
摘要 A method of processing a polycrystalline film on a substrate includes generating a plurality of laser beam pulses, positioning the film on a support capable of movement in at least one direction, directing the plurality of laser beam pulses through a mask to generate patterned laser beams; each of said beams having a length l', a width w' and a spacing between adjacent beams d', irradiating a region of the film with the patterned beams, said beams having an intensity that is sufficient to melt an irradiated portion of the film to induce crystallization of the irradiated portion of the film, wherein the film region is irradiated n times; and after irradiation of each film portion, translating either the film or the mask, or both, a distance in the x- and y-directions, where the distance of translation in the y-direction is in the range of about l'/n-d, where d is a value selected to form overlapping the beamlets from the one irradiation step to the next, and where the distance of translation in the x-direction is selected such that the film is moved a distance of about ?' after n irradiations, where ?' = w' + d'.
申请公布号 WO2005034193(A3) 申请公布日期 2006.12.14
申请号 WO2004US30801 申请日期 2004.09.17
申请人 THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OFNEW YORK;IM, JAMES, S.;VAN DER WILT, PAUL, CHRISTIAN 发明人 IM, JAMES, S.;VAN DER WILT, PAUL, CHRISTIAN
分类号 C30B25/12;C30B1/00;C30B3/00;C30B5/00;C30B13/24;C30B25/14;G03F7/20;H01L 主分类号 C30B25/12
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