| 摘要 |
<p>A mask for forming an isolated pattern and a forming method of the isolated pattern using the same are provided to improve depth of focus by arranging a phase shift region at both sides of the isolated pattern. A mask for forming an isolated pattern includes a transparent substrate(400), a halftone layer(410) formed on the transparent substrate corresponding to the isolated pattern, and a phase shift region(430) formed at both sides of the halftone pattern in order to have the phase difference of 90-270 degree. A light shielding layer(422) is formed on the halftone layer.</p> |
