SEMICONDUCTOR DEVICE MANUFACTURE USING A SIDEWALL SPACER ETCHBACK

摘要

The invention provides a method of manufacturing an integrated circuit semiconductor device. A gate structure (130) is formed over a substrate (110), the gate structure having L- shaped sidewall spacers (430) on opposing sidewalls thereof and placing source/drain implants (310 or 510) into the substrate proximate the gate structure. At least a portion of a horizontal segment of the L-shaped sidewall spacers (430) is removed.