发明名称 |
Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices |
摘要 |
A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.
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申请公布号 |
US7138291(B2) |
申请公布日期 |
2006.11.21 |
申请号 |
US20030248586 |
申请日期 |
2003.01.30 |
申请人 |
CREE, INC. |
发明人 |
MCCLURE DAVIS ANDREW;SUVOROV ALEXANDER;EDMOND JOHN ADAM;SLATER, JR. DAVID BEARDSLEY |
分类号 |
H01L21/00;C30B1/00;H01L21/04;H01L21/20;H01L21/336;H01L33/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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