| 摘要 |
PROBLEM TO BE SOLVED: To suppress abnormal growth and aggregation of a silicide film of an impurity diffused layer in a semiconductor device in which the silicide film is formed in a gate electrode and the impurity diffused layer. SOLUTION: The semiconductor device 100 includes a silicon substrate 102, a semiconductor element formed on the silicon substrate 102 and including the gate electrode 132, an impurity diffused layer 121 (or 122) formed in the both sides of the region in which the semiconductor element of the silicon substrate 102 is formed in the cross-section of the direction of the gate length, a first silicide film 130 formed on the front surface of the impurity diffused layer 121 (or 122) and configured by the silicide compound of a first metal, and a second silicide film 131 formed on at least the front surface of the gate electrode 132 and constituted by the second metal silicide compound with the lower temperature of the silicide formation than the silicide compound of the first metal. COPYRIGHT: (C)2007,JPO&INPIT |
