| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of transferring data and making access at high speed by a low current consumption. SOLUTION: Local control circuits (120a-120d, 140a-140d, 160a-160d, 180a-180d) are provided for each of a plurality of array blocks. Control signals and address signals are given to these local control circuits, and in each of the local control circuits, an operation specified to a corresponding memory block is executed at the selection. COPYRIGHT: (C)2007,JPO&INPIT
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