| 摘要 |
A method for manufacturing a semiconductor device with a metallic gate pattern is provided to reduce the electric charge trapped in a tunnel oxide layer by improving the surface quality of the tunnel oxide layer using a selective oxidation under a predetermined gas condition. A gate electrode composed of a polysilicon layer, a tungsten nitride layer(15) and a tungsten film(16) is formed on a semiconductor substrate(10). A selective oxide layer(18) is formed at a sidewall of the polysilicon layer by performing a selective oxidation on the resultant structure under a predetermined gas atmosphere. At this time, a barrier nitride spacer is formed at a sidewall of the tungsten film. The predetermined gas is an NO gas containing H2.
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