发明名称 |
Methods of forming recessed access devices associated with semiconductor constructions |
摘要 |
The invention includes methods of forming recessed access devices. A substrate is provided to have recessed access device trenches therein. A pair of the recessed access device trenches are adjacent one another. Electrically conductive material is formed within the recessed access device trenches, and source/drain regions are formed proximate the electrically conductive material. The electrically conductive material and source/drain regions together are incorporated into a pair of adjacent recessed access devices. After the recessed access device trenches are formed within the substrate, an isolation region trench is formed between the adjacent recessed access devices and filled with electrically insulative material to form a trenched isolation region.
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申请公布号 |
US2006216894(A1) |
申请公布日期 |
2006.09.28 |
申请号 |
US20050090529 |
申请日期 |
2005.03.25 |
申请人 |
PAREKH KUNAL R;MATHEW SURAJ;TRIVEDI JIGISH D;ZAHURAK JOHN K;TANG SANH D |
发明人 |
PAREKH KUNAL R.;MATHEW SURAJ;TRIVEDI JIGISH D.;ZAHURAK JOHN K.;TANG SANH D. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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