发明名称 |
Semiconductor device and method of manufacturing the device |
摘要 |
Cut faces 15 a to 15 h are formed on the front end faces 13 a to 13 h of the exposed portions 12 a to 12 h of respective lead terminals 11 a to 11 h of a semiconductor device 100, and plating for increasing the solderability is provided on the cut faces 15 a to 15 h.
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申请公布号 |
US7098081(B2) |
申请公布日期 |
2006.08.29 |
申请号 |
US20040490980 |
申请日期 |
2004.03.26 |
申请人 |
HAMAMATSU PHOTONICS K.K. |
发明人 |
SAKAKIBARA MASAYUKI;MORISHITA MASARU |
分类号 |
H01L21/44;H01L21/56;H01L21/48;H01L23/31;H01L23/48;H01L23/495;H01L23/498;H01L23/50;H05K3/34 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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