发明名称 Semiconductor device and method of manufacturing the device
摘要 Cut faces 15 a to 15 h are formed on the front end faces 13 a to 13 h of the exposed portions 12 a to 12 h of respective lead terminals 11 a to 11 h of a semiconductor device 100, and plating for increasing the solderability is provided on the cut faces 15 a to 15 h.
申请公布号 US7098081(B2) 申请公布日期 2006.08.29
申请号 US20040490980 申请日期 2004.03.26
申请人 HAMAMATSU PHOTONICS K.K. 发明人 SAKAKIBARA MASAYUKI;MORISHITA MASARU
分类号 H01L21/44;H01L21/56;H01L21/48;H01L23/31;H01L23/48;H01L23/495;H01L23/498;H01L23/50;H05K3/34 主分类号 H01L21/44
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