发明名称 |
Method for manufacturing a group III nitride compound semiconductor device |
摘要 |
A method for manufacturing a group III nitride compound semiconductor device includes irradiating a surface of a wafer with ultraviolet rays to thereby clean a resist residue from the surface of the wafer, the surface including a group III nitride compound semiconductor. The ultraviolet rays cause a reaction of oxygen molecules to form stimulated oxygen atoms having a strong oxidative power at the surface.
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申请公布号 |
US7096873(B2) |
申请公布日期 |
2006.08.29 |
申请号 |
US20010935699 |
申请日期 |
2001.08.24 |
申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
UEMURA TOSHIYA;NAKAJO NAOKI |
分类号 |
B08B5/00;H01L21/302;B08B7/00;H01L21/027;H01L21/306;H01L21/3065;H01L21/308;H01L31/10;H01L33/06;H01L33/32;H01L33/42;H01S5/323;H01S5/343 |
主分类号 |
B08B5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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