| 摘要 |
<p>A self-aligned silicide (salicide) process is used to form a silicide for a CMOS image sensor consistent with a conventional CMOS image sensor process flow. An insulator layer is deposited over the pixel array of the image sensor. An organic layer is deposited over the insulator layer. A chemical mechanical polish (CMP) is performed to remove the organic over raised polysilicon structures. Using the organic layer as a mask, portions of the insulator layer are removed and a metal layer is deposited. The metal layer is annealed to form a metal silicide.</p> |
