| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat dissipation substrate excellent in high thermal conductivity and low thermal expansion nature by improving the heat dissipation substrate for loading the semiconductor made of a conventional copper-tungsten alloy. SOLUTION: The heat dissipation substrate for loading the semiconductor includes a hole penetrated through the front and back formed in the predetermined part of the block of a low thermal expansion material made of a composite alloy containing a silver-copper alloy with 0.02-0.4 wt.% of silver and a tungsten or a molybdenum, and an alloy contains 8-30 wt.% the silver-copper alloy of or a molybdenum which does not contain the above silver-copper alloy, and the silver-copper alloy fills this hole. It is more effective to provide a coating layer which is made of a copper or a silver-copper alloy on both sides of front and back surfaces of the heat dissipation substrate. COPYRIGHT: (C)2006,JPO&NCIPI |
