发明名称 |
Method for separating sapphire wafer into chips |
摘要 |
Disclosed is a method for efficiently separating a sapphire wafer serving as a substrate, on which semiconductor elements are formed, into unit chips by scribing the sapphire wafer, after grinding and lapping a rear surface of the sapphire wafer and then sand-blasting the sapphire wafer. The method includes the steps of: (a) grinding a rear surface of the sapphire wafer so that the sapphire wafer has a designated thickness; (b) lapping the rear surface of the ground sapphire wafer so that the sapphire wafer has a designated thickness; (c) polishing the rear surface of the lapped sapphire wafer so that the sapphire wafer has a designated thickness; (d) sand-blasting the rear surface of the polished sapphire wafer by uniformly blasting particles at a designated pressure during a designated time onto the rear surface of the polished sapphire wafer; and (e) scribing the rear surface of the sand-blast ground sapphire wafer.
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申请公布号 |
US7074652(B2) |
申请公布日期 |
2006.07.11 |
申请号 |
US20040806433 |
申请日期 |
2004.03.23 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
YOON JEONG GOO;OH BANG WON;YI KUK HWEA |
分类号 |
H01L21/48;H01L21/78;G03C5/00;H01L29/22;H01L33/00 |
主分类号 |
H01L21/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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