| 摘要 |
The non-volatile memory cell is comprised of the series integration of a fixed threshold element and a bistable element. The fixed threshold element is formed over a substrate with a gate insulator layer and an access gate having a nitride layer. The bistable element is formed adjacent to the fixed threshold element by a tunnel insulator over the substrate, a charge trapping layer over the tunnel insulator, a charge blocking layer over the trapping layer, and a control gate, having a nitride layer, over the charge blocking layer. In one embodiment, the gate insulator, tunnel insulator and charge trapping layers are all SiON with thicknesses that depend on the designed programming voltage. The control gate can be formed overlapping the access gate or the access gate can be formed overlapping the control gate.
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