| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photomask and a method for forming a pattern using the photomask. <P>SOLUTION: In a photomask having a plurality of ring gate patterns 122 having a vertical symmetric structure used in a semiconductor exposure step, a subsidiary pattern 124 is added in the hole of each ring gate pattern 122 on the photomask, the subsidiary pattern separated from the ring gate pattern by a designated distance. By adding the subsidiary pattern in the hole as separated by a designated distance from the ring gate pattern 122 having a vertical symmetric structure, variation of critical dimensions (CD) in a pair of ring gate patterns having a vertical symmetric structure is reduced, where CD due to lens aberration between adjacent patterns must be the same, and a fine pattern is precisely formed. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
