| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a capacitor with an MIM structure capable of ensuring a sufficient capacity in a limited cell area by forming unevenness on the surface of a lower electrode without an additional complex process. <P>SOLUTION: In the method of manufacturing the semiconductor apparatus, the titanium nitride film 16a of the lower electrode of a capacitor is formed on the surface of a second hall 15. The formation of the titanium nitride film 16a is performed by repeating a chemical vapor depositing method and annealing under an ammonia atmosphere 16 times. This chemical vapor depositing method is performed under the condition of a flow ratio of titanium tetrachloride to ammonia of a raw material gas at a low temperature and a high pressure, which is higher than the conventional ratio, and thereby the unevenness can be increased on the surface of the titanium nitride film 16a. By performing the annealing under the ammonia atmosphere, the titanium nitride film 16a is reduced in resistance. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
