Verfahren zur Herstellung von Festkoerper-Schaltungsanordnungen

摘要

1,154,868. Semi-conductor structures. INTERNATIONAL BUSINESS MACHINES CORP. 7 Dec., 1966 [6 Jan., 1966], No. 54787/66. Heading H1K. [Also in Division C7] A body is bonded to a substrate, either or both of which are of a semi-conductor material, by placing the body in a recess in the substrate and filling the space between the body and the substrate by epitaxially growing a bonding material on the body or the substrate. As shown in Fig. 2B, chips 21, 211 of gallium arsenide and germanium, respectively are placed in recesses 19 in a substrate of e.g. gallium arsenide, Si, Ge, sapphire, calcium fluoride, alumina, beryllia, aluminium nitride or glass, and germanium is deposited by decomposition of e.g. germanium iodide to form the bonding material 23. The surface may be lapped or etched (Figs. 2C, 2D, not shown). In a modification (Fig. 3, not shown) the substrate may be conductive, e.g. Mo, W or Ni, or semi-conductive e.g. Si, Ge or gallium arsenide, and an insulating layer of e.g. alumina or silicon dioxide is first formed on the substrate. In a further modification, Fig. 4C, the substrate 711 which may be of sapphire has through holes in which Si chips 21 are bonded by depositing Si. A layer 37 of silicon dioxide is applied subsequently by decomposing tetraethylorthosilicate, windows are cut in this layer, and thin film connections 41 are formed. In the final modification (Fig. 5, not shown) chips of N-type gallium arsenide are bonded in through holes in a substrate of e.g. Mo by depositing zinc doped gallium arsenide to form an electroluminescent diode matrix.