| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a high frequency amplifier capable of reducing current collapse phenomenon while suppressing an increase in a chip area. SOLUTION: The semiconductor device has a GaAs substrate 6, a sub-collector layer 5 provided on the GaAs substrate, a collector layer 4 provided on a part of the sub-collector layer 5, a base layer (a first semiconductor layer) 3 provided on the collector layer 4, a second emitter layer (a second semiconductor layer) 2a provided on an intrinsic base region 11 out of the base layer 3, a second emitter layer (the second semiconductor layer) 2b provided on an external base region 2a out of the base layer 3, and a first emitter layer 1 provided on the second emitter layer 2a. COPYRIGHT: (C)2006,JPO&NCIPI
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