| 摘要 |
<p>The invention is directed to an improvement of reliability of a chip size package type semiconductor device in a manufacturing method thereof. A support body (14) is formed on a front surface of a semiconductor substrate (10) with a first insulation film (11) therebetween. Then, a part of the semiconductor substrate (10) is selectively etched from its back surface to form an opening (10w), and then a second insulation film (16) is formed on the back surface. Next, the first insulation film (11) and the second insulation film (16) at a bottom of the opening (10w) are selectively etched, to expose pad electrodes (12) at the bottom of the opening (10w). Then, a third resist layer (18) is selectively formed on the second insulation film (16) at boundaries between sidewalls and the bottom of the opening (10w) on the back surface of the semiconductor substrate (10). Furthermore, a wiring layer (19) electrically connected with the pad electrodes (12) at the bottom of the opening (10w) and extending onto the back surface of the semiconductor substrate (10) is selectively formed corresponding to a predetermined pattern.</p> |
