发明名称 THIN FILM SURFACE ACOUSTIC WAVE DEVICE, MANUFACTURING METHOD THEREOF AND PACKAGED THIN-FILM SURFACE ACOUSTIC WAVE UNIT
摘要 PROBLEM TO BE SOLVED: To provide a surface acoustic wave device having a small cubic capacity with a reduced thickness and a reduced plane area, by integrally forming circuit substrate, capacitor and surface acoustic wave element. SOLUTION: A thin film surface acoustic wave device 10 has a drive electrode 15, a connection electrode 16, and thin-film capacitor electrodes 17, 18 which are formed on a piezoelectric thin film 12 formed on a substrate 11. The substrate 11, the piezoelectric thin film 12, and the thin-film capacitor electrodes 17, 18 form a thin film capacitor. The drive electrode 15, the connection electrode 16, and the thin-film capacitor electrodes 17, 18 are connected by both a circuit 22 formed on a substantial surface of the substrate 11 and through holes 19. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006067271(A) 申请公布日期 2006.03.09
申请号 JP20040247923 申请日期 2004.08.27
申请人 SEIKO EPSON CORP 发明人 FURUHATA MAKOTO;BOKU SOKURIN;FUNASAKA TSUKASA
分类号 H03H9/145;H03H3/08 主分类号 H03H9/145
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