| 摘要 |
In the solid-state image sensing device, a first N type semiconductor region and an N well of a PMOS region are formed in the same process, thereby making the first N type semiconductor region and the N well in the PMOS region substantially equal in N type impurity concentration-depth profile. By forming the first N type semiconductor region and the N well in the same process, the number of manufacturing process for the solid-state image sensing device can be decreased. It is, therefore, possible to suppress excessive application of heat history to the solid-state image sensing device during ion implantation and diffusion of N type impurity. Accordingly, by suppressing excessive diffusion of impurity and the like resulting from the excessive application of the heat history to the solid-state image sensing device, yield of the solid-state image sensing device can be improved.
|
