| 摘要 |
A cleaning method for a semiconductor device manufacturing apparatus includes a process of forming a film on a subject piece in a processing chamber, applying light having a predetermined wavelength to a monitoring section to indirectly monitor a thickness of a film formed on the subject piece, introducing cleaning gas capable of removing a substance deposited on the monitoring section into the processing chamber, measuring a reflection light which is the application light reflected near the monitoring section, measuring an amount of a substance corresponding to a thickness of a film deposited on the monitoring section based on a measurement result of the reflection light; and introducing, into the processing chamber, a cleaning gas which can remove the substance on the monitoring section until a measurement value of the amount of the substance on the monitoring section becomes zero.
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