发明名称 Thin film transistor array substrate and fabricating method thereof
摘要 A thin film transistor array substrate and a fabricating method thereof are disclosed. The thin film transistor array substrate protects a thin film transistor without a protective film and accordingly reduces the manufacturing cost. In the thin film transistor array substrate, a gate electrode is connected to a gate line. A source electrode is connected to a data line crossing the gate line to define a pixel area. A drain electrode is opposed to the source electrode with a channel therebetween. A semiconductor layer is in the channel. A pixel electrode in the pixel area contacts the drain electrode over substantially the entire overlapping area between the two. A channel protective film is provided on-the semiconductor layer corresponding to the channel to protect the semiconductor layer.
申请公布号 US2005285195(A1) 申请公布日期 2005.12.29
申请号 US20050149689 申请日期 2005.06.10
申请人 LG PHILIPS LCD CO., LTD. 发明人 CHOI YOUNG S.;AHN BYUNG Y.;CHO KI S.;YU HONG W.
分类号 G02F1/136;G02F1/1362;G02F1/1368;H01L21/00;H01L21/336;H01L21/77;H01L21/84;H01L27/01;H01L27/12;H01L27/146;H01L29/417;H01L29/786;(IPC1-7):H01L27/01 主分类号 G02F1/136
代理机构 代理人
主权项
地址