METHOD OF MANUFACTURING RECESS CHANNEL MOSFET

摘要

PROBLEM TO BE SOLVED: To provide the method of manufacturing a recess channel MOSFET capable of forming a recess trench without cutting a recess in the portion of the element isolation film of a substrate. SOLUTION: In the method of manufacturing a recess channel MOSFET, an insulating film pattern is formed on a semiconductor substrate 110. Then, a silicon oxide film is deposited on it. The insulating film pattern is removed by planarizing the silicon oxide film using the insulating film pattern as a planarization ending point and thereby forming a silicon oxide film mask pattern between the insulating film patterns. A recess trench 145 is formed by etching the substrate using the silicon oxide film mask pattern 142 as an etching mask. This method provides the effect of removing the recess formed in the substrate at the time of the deposition of the silicon oxide film. COPYRIGHT: (C)2006,JPO&NCIPI