发明名称 Polishing composition.
摘要 There is provided a polishing composition that reduces erosion and is used in a final polishing step of a semiconductor device manufacturing process. The polishing composition contains colloidal silica, a periodic acid compound, ammonia, ammonium nitrate and water and its pH is 1.8 to 4.0.
申请公布号 SG116506(A1) 申请公布日期 2005.11.28
申请号 SG20030005776 申请日期 2003.09.30
申请人 FUJIMI INCORPORATED 发明人 KOJI OHNO;CHIYO HORIKAWA;KENJI SAKAI;KASUYOSHI INA
分类号 B24B37/00;C09C1/68;C09G1/02;C09K3/14;H01L21/304;H01L21/3105;H01L21/321;(IPC1-7):C09K3/145 主分类号 B24B37/00
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