| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist material having high sensitivity, high resolution, and a small line edge roughness, which is suitable to be used as a material for forming a fine pattern for the production of a VLSI. <P>SOLUTION: The positive resist material comprises a polymer compound consisting of a unit A with an ester group of an exo form, represented by formula (1a), and a unit B having an ester group with two hexafluoroisopropanol groups, represented by formula (1b) as the constitutional units. Formula (1a) also represents a mirror image. In formula (1a), R<SP>1</SP>and R<SP>2</SP>are each H, CH<SB>3</SB>or CH<SB>2</SB>CO<SB>2</SB>R<SP>14</SP>, R<SP>3</SP>is an alkyl group or an aryl group, R<SP>4</SP>-R<SP>9</SP>and R<SP>12</SP>and R<SP>13</SP>are each H or a monovalent hydrocarbon group, R<SP>10</SP>and R<SP>11</SP>are H or may form each a ring or a double bond, R<SP>14</SP>is H or an alkyl group. In formula (1b), R<SP>15</SP>is H or CH<SB>3</SB>, R<SP>16</SP>and R<SP>17</SP>is H or an acid unstable group. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
