| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light detecting element and a manufacturing method of the same, capable of sufficiently contriving miniaturization while keeping a mechanical strength. <P>SOLUTION: The semiconductor light detecting element PD1 has a layer structural body LS1 and a glass substrate 1. The layer structural body LS1 comprises a laminated etching stopping layer 2, an n-type high density carrier layer 3, an n-type light absorbing layer 5, and an n-type cap layer 7. A light receiving region 9 is formed on one directional surface side of the layer structural body LS1. A first electrode unit 21 is arranged on one directional surface side of the layer structural body LS1. A first pad electrode 27 and a third electrode unit 31 are arranged on the other directional side of the layer structural body LS1. A film 10 is formed on one directional side of the layer structural body LS1 so as to cover the light receiving region 9 and the first electrode unit 21. The glass substrate 1 is bonded to a surface 10a of opposite side of the layer structural body LS1 in the film 10 so as to be contacted with the surface 10a. The glass substrate 1 is optically transparent with respect to incident light. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
