发明名称 |
CLEANING TANTALUM-CONTAINING DEPOSITS FROM PROCESS CHAMBER COMPONENTS |
摘要 |
A method of cleaning tantalum-containing deposits from a surface of a process chamber component includes immersing the surface of the component in a cleaning solution having a ration of HF to HNO3 of from about 1:8 to about 1:30 by weight. In another version, the cleaning solution has a ration of KOH to H2O2 of from about 6:1 to about 10:1 by moles. In yet another version suitable for cleaning copper surfaces, the cleaning solution includes HF and an oxidizing agent in a molar ratio of HF to the oxidizing agent of at least about 6:1. The tantalum-containing deposits can be removed from the surface substantially without eroding the surface. |
申请公布号 |
WO2005068681(A3) |
申请公布日期 |
2005.09.15 |
申请号 |
WO2004US16518 |
申请日期 |
2004.05.25 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
BRUECKNER, KARL;WANG, HONG |
分类号 |
B08B3/08;C22B3/06;C22B7/00;C22B34/24;C23C14/56;C23C16/44;C23G1/08;C23G1/10;C23G1/12;C23G1/19;C23G1/20;C23G1/22 |
主分类号 |
B08B3/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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