发明名称 |
Positive resist composition for immersion exposure and method of pattern formation with the same |
摘要 |
A positive resist composition for immersion exposure which comprises (A) a resin which enhances its solubility in an alkaline developer by the action of an acid and (B) at least one compound which generates an acid upon irradiation with an actinic ray or a radiation, the compound being selected from the following (Ba) to (Bc): (Ba) a sulfonium salt compound having a specific alkyl or cycloalkyl residue in the cation part, (Bb) a sulfonium salt compound having a specific alkyl or cycloalkyl residue in the cation part, and (Bc) a sulfonium salt compound having a specific alkyl or cycloalkyl residue in the anion part; and a method of pattern formation with the composition.
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申请公布号 |
US2005186505(A1) |
申请公布日期 |
2005.08.25 |
申请号 |
US20050060530 |
申请日期 |
2005.02.18 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
KODAMA KUNIHIKO;KANDA HIROMI |
分类号 |
G03C1/492;G03F7/004;G03F7/039;G03F7/20;(IPC1-7):G03C1/492 |
主分类号 |
G03C1/492 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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