发明名称 |
Plasma processing apparatus, semiconductor manufacturing apparatus and electrostatic chucking unit used thereof |
摘要 |
A wiring member which becomes substantially symmetrical on the plane of an electrostatic chuck unit is connected to the tip end of an RF introduction rod between the RF introduction rod and the electrostatic chuck unit in order to make uniform generation of an electric field due to bias RF which becomes a cause of plasma damage. The connection point between the electrostatic chuck unit and the wiring member may be single or plural.
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申请公布号 |
US2005183828(A1) |
申请公布日期 |
2005.08.25 |
申请号 |
US20050064817 |
申请日期 |
2005.02.25 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
TANIKUNI TAKAMASA;DEN YASUHIDE |
分类号 |
C23C16/458;C23C16/507;C23C16/513;C23F1/00;H01L21/00;H01L21/31;H01L21/683;(IPC1-7):C23F1/00 |
主分类号 |
C23C16/458 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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